EuroSOI-ULIS 2026: 12th Joint EuroSOI Workshop and International Conference on Ultimate Integration on Silicon Granada, Spain, May 20-22, 2026

Dear colleague, 

The 12th edition of the Joint EuroSOI Workshop and International Conference on Ultimate Integration on Silicon - EuroSOI-ULIS 2026 – will be held in Granada, Spain on May 20-22, 2026.

The Joint EuroSOI-ULIS International Conference is an annual event that has been running since 2013. Past conferences in this series have been held in Athens, Greece (2017); Granada, Spain (2018); Grenoble, France (2019); Caen, France (virtual, 2020); Caen, France (2021); Udine, Italy (2022); Tarragona, Spain (2023); Athens, Greece (2024); and Warsaw, Poland (2025). This year, the conference returns to Spain, to the city of Granada, after eight years.

This conference aims to bring together scientists and engineers in an interactive forum to discuss SOI technology and advanced microelectronic devices. A key objective is to foster collaboration and partnerships among academia, research institutions, and industry stakeholders in the field.

We warmly invite students and researchers from both academic and industrial backgrounds to submit their abstracts and join us in Granada. The conference offers a valuable opportunity to engage with colleagues, share knowledge, and experience the charm of this marvelous city.

Selected papers will be published as 4-page letters in a Special Issue of Solid-State Electronics (Elsevier).

The “Androula Nassiopoulou Best Paper Award” will be attributed by the SINANO Institute.

In addition to the technical program, we aim to offer an enriching cultural and historical experience for all attendees.

Abstract submission link: https://easychair.org/conferences?conf=eurosoiulis2026

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Abstract submission deadline: February 15, 2026

For more details, visit the conference website at https://eurosoiulis2026.ugr.es/

List of Topics

• Advanced SOI materials and structures, innovative SOI-like devices.
• Alternative transistor architectures (FDSOI, Nanowire, Nanosheet, FinFET, MuGFET, vertical MOSFET, FeFET and TFET, MEMS/NEMS, Beyond-CMOS).
• New channel materials for CMOS (strained Si/Ge, III-V, carbon nanotubes; graphene and other 2D materials).
• Properties of ultra-thin semiconductor films and buried oxides, defects, interface quality; thin gate dielectrics: high-κ and ferroelectric materials for switches and memory.
• New functionalities and innovative devices in the More than Moore domain: nanoelectronic sensors, biosensor devices, memrisors, neuromorphic computing devices, quantum computing devices, energy harvesting devices, RF devices, imagers, integrated photonics (on SOI), etc.
• Transport phenomena, compact modeling, device simulation, front- and back-end process simulation.
• CMOS scaling perspectives; device/circuit level performance evaluation; switches and memory scaling; three-dimensional integration of devices and circuits, heterogeneous integration.
• Advanced test structures and characterization techniques, parameter extraction, reliability and variability assessment techniques for new materials and novel devices.
• Memory devices, memristors, hardware for unconventional computing such as neuromorphic, in-memory, in-sensor and quantum computing.

Contact

All questions about submissions should be emailed to eurosoiulis2026@ugr.es

For more details, visit the conference website at https://eurosoiulis2026.ugr.es/